BAT18 Datasheet, PDF (3/4 Pages) NXP Semiconductors – Band-switching diode

Philips Semiconductors
Band-switching diode
GRAPHICAL DATA
handbook¹,⁰h⁰alfpage
IF
(mA)
50
MBG312
(1) (2)
(3)
0
0
0.5
(1) T_j = 60 °C; typical values.
(2) T_j = 25 °C; typical values.
(3) T_j = 25 °C; maximum values.
1
V _F (V) ^1.5
Fig.2 Forward current as a function of
forward voltage.
1.5
handbook, halfpage
Cd
(pF)
1
MBG313
0.5
Product specification
BAT18
handbo_Io_R1k,⁰h⁵alfpage
(nA)
10 ⁴
10 ³
10 ²
MBG311
10
1
10 ^−1
0
50
V_R = 20 V.
Solid line: maximum values.
Dotted line: typical values.
100 _{Tj ( oC)} 150
Fig.3 Reverse current as a function of
junction temperature.
2
handbook, halfpage
rD
(Ω)
1
MBG314
0
10^−1
1
10 _{VR (V)} 10²
0
1
10
IF (mA)
10 ²
f = 1 MHz; T_j = 25 °C.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
f = 200 MHz; T_j = 25 °C.
Fig.5 Diode forward resistance as a function of
forward current; typical values.
1996 Mar 13
3