BAT18 Datasheet, PDF (2/4 Pages) NXP Semiconductors – Band-switching diode

Philips Semiconductors
Band-switching diode
Product specification
BAT18
FEATURES
• Continuous reverse voltage:
max. 35 V
• Continuous forward current:
max. 100 mA
• Low diode capacitance:
max. 1.0 pF
• Low diode forward resistance:
max. 0.7 Ω.
APPLICATION
• Band switching.
DESCRIPTION
Planar high performance
band-switching diode in a small
rectangular plastic SOT23 SMD
package.
PINNING
PIN
DESCRIPTION
1 anode
2 not connected
3 cathode
handbook, halfpa2ge
1
2
n.c.
1
3
3
Marking code: A2.
MAM185
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_R
continuous reverse voltage
I_F
continuous forward current
T_stg
storage temperature
T_j
junction temperature
ELECTRICAL CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V_F
forward voltage
I_R
reverse current
C_d
diode capacitance
r_D
diode forward resistance
CONDITIONS
I_F = 100 mA; see Fig.2
see Fig.3
V_R = 20V
V_R = 20 V; T_j = 60 °C
f = 1 MHz; V_R = 20 V; see Fig.4
I_F = 5 mA; f = 200 MHz; see Fig.5
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-tp}
R_{th j-a}
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
Note
1. Device mounted on a FR4 printed-circuit board.
1996 Mar 13
2
MIN.
−
−
−55
−
MAX.
35
100
+125
125
UNIT
V
mA
°C
°C
TYP.
−
MAX. UNIT
1.2 V
−
100
nA
−
1
µA
0.8
1.0 pF
0.5
0.7 Ω
VALUE
330
500
UNIT
K/W
K/W