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BAS86_15 Datasheet, PDF (3/9 Pages) NXP Semiconductors – Schottky barrier single diode
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NXP Semiconductors
BAS86
Schottky barrier single diode
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
Min Typ Max Unit
[1]
-
-
320 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 7.
Symbol
VF
IR
Cd
trr
Characteristics
Parameter
Conditions
forward voltage
IF = 0.1 mA; Tamb = 25 °C
IF = 1 mA; Tamb = 25 °C
IF = 10 mA; Tamb = 25 °C
IF = 30 mA; Tamb = 25 °C
IF = 100 mA; Tamb = 25 °C
reverse current
VR = 40 V; Tamb = 25 °C; pulsed;
tp ≤ 300 µs; δ ≤ 0.02
diode capacitance
f = 1 MHz; Tamb = 25 °C; VR = 1 V
reverse recovery time IF = 10 mA; IR = 10 mA; RL = 100 Ω;
IR(meas) = 1 mA; Tamb = 25 °C
Min Typ Max Unit
-
-
300 mV
-
-
380 mV
-
-
450 mV
-
-
600 mV
-
-
900 mV
-
-
5
µA
-
-
8
pF
-
-
4
ns
BAS86
Product data sheet
All information provided in this document is subject to legal disclaimers.
25 July 2012
© NXP B.V. 2012. All rights reserved
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