BAS86_15 Datasheet, PDF (1/9 Pages) NXP Semiconductors – Schottky barrier single diode

BAS86
Schottky barrier single diode
25 July 2012
Product data sheet
1. Product profile
1.1 General description
Planar Schottky barrier diode with an integrated guard ring for stress protection,
encapsulated in a small hermetically sealed SOD80C glass Surface-Mounted Device
(SMD) package with tin-plated metal discs at each end. It is suitable for “automatic
placement” and as such it can withstand immersion soldering.
1.2 Features and benefits
• Low forward voltage
• High breakdown voltage
• Guard ring protected
• Hermetically sealed glass SMD package.
1.3 Applications
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes
1.4 Quick reference data
Table 1.
Symbol
I_F(AV)
V_R
V_F
Quick reference data
Parameter
average forward
current
reverse voltage
forward voltage
Conditions
I_F = 100 mA; T_amb = 25 °C
Min Typ Max Unit
[1]
-
-
200 mA
-
-
50
V
-
-
900 mV
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
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