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| BAS85_00 Datasheet, PDF (3/8 Pages) NXP Semiconductors – Schottky barrier diode | |||
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Philips Semiconductors
Schottky barrier diode
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C; unless otherwise speciï¬ed.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
Cd
diode capacitance
Note
1. Pulsed test: tp = 300 µs; δ = 0.02.
CONDITIONS
see Fig.3
IF = 0.1 mA
IF = 1 mA
IF = 10 mA
IF = 30 mA
IF = 100 mA
VR = 25 V; note 1; see Fig.4
f = 1 MHz; VR = 1 V; see Fig.5
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Refer to SOD80 standard mounting conditions.
CONDITIONS
note 1
Product speciï¬cation
BAS85
MAX. UNIT
240
mV
320
mV
400
mV
500
mV
800
mV
2.3
µA
10
pF
VALUE
320
UNIT
K/W
2000 May 25
3
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