BAS85_00 Datasheet, PDF (2/8 Pages) NXP Semiconductors – Schottky barrier diode

Philips Semiconductors
Schottky barrier diode
Product specification
BAS85
FEATURES
• Low forward voltage
• High breakdown voltage
• Guard ring protected
• Hermetically-sealed small SMD
package.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
DESCRIPTION
Planar Schottky barrier diode with an
integrated protection ring against
static discharges.
This surface mounted diode is
encapsulated in a hermetically sealed
SOD80C glass SMD package with
tin-plated metal discs at each end. It
is suitable for “automatic placement”
and as such it can withstand
immersion soldering.
handbook, halfpage
k
a
Cathode indicated by a grey band.
MAM190
Fig.1 Simplified outline (SOD80C), pin configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
V_R
I_F
I_F(AV)
continuous reverse voltage
continuous forward current
average forward current
I_FRM
I_FSM
T_stg
T_j
T_amb
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
V_RWM = 25 V; a = 1.57; δ = 0.5;
note 1; Fig.2
t_p ≤ 1 s; δ ≤ 0.5
t_p = 10 ms
MIN.
−
−
−
−
−
−65
−
−65
Note
1. Refer to SOD80 standard mounting conditions.
MAX.
30
200
200
UNIT
V
mA
mA
300
mA
5
A
+150 °C
125
°C
+125 °C
2000 May 25
2