2N5401 Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP high-voltage transistor

Philips Semiconductors
PNP high-voltage transistor
Product specification
2N5401
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-a}
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
200
UNIT
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
I_CBO
I_EBO
h_FE
V_CEsat
C_c
f_T
F
collector cut-off current
I_E = 0; V_CB = −120 V
−
I_E = 0; V_CB = −120 V; T_amb = 100 °C
−
emitter cut-off current
I_C = 0; V_EB = −4 V
−
DC current gain
I_C = −1 mA; V_CE = −5 V; see Fig.2
50
I_C = −10 mA; V_CE = −5 V; see Fig.2
60
I_C = −50 mA; V_CE = −5 V; see Fig.2
50
collector-emitter saturation voltage I_C = −10 mA; I_B = −1 mA
−
I_C = −50 mA; I_B = −5 mA
−
collector capacitance
I_E = i_e = 0; V_CB = −10 V; f = 1 MHz
−
transition frequency
I_C = −10 mA; V_CE = −10 V; f = 100 MHz 100
noise figure
I_C = −200 µA; V_CE = −5 V; R_S = 2 kΩ; −
f = 10 Hz to 15.7 kHz
MAX.
−50
−50
−50
−
240
−
−200
−500
6
300
8
UNIT
nA
µA
nA
mV
mV
pF
MHz
pF
1999 Apr 08
3