2N5401 Datasheet, PDF (2/8 Pages) NXP Semiconductors – PNP high-voltage transistor

Philips Semiconductors
PNP high-voltage transistor
Product specification
2N5401
FEATURES
• Low current (max. 300 mA)
• High voltage (max. 150 V).
APPLICATIONS
• General purpose switching and amplification
• Telephony applications.
DESCRIPTION
PNP high-voltage transistor in a TO-92; SOT54 plastic
package. NPN complement: 2N5551.
PINNING
PIN
1
2
3
collector
base
emitter
DESCRIPTION
handbook, halfpage1
2
3
1
2
3
MAM280
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
T_stg
T_j
T_amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
T_amb ≤ 25 °C
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
−160
−150
−5
−300
−600
−100
630
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 Apr 08
2