TDA8922 Datasheet, PDF (25/36 Pages) NXP Semiconductors – 2 x 25 W class-D power amplifier

Philips Semiconductors
2 × 25 W class-D power amplifier
Objective specification
TDA8922
0
handb_αoo_ck_s, halfpage
(dB)
− 20
MGX330
− 40
− 60
− 80
(1)
(2)
− 100
10
10²
10³
10⁴
10⁵
fi (Hz)
2 × 8 Ω SE; V_P = ±20 V.
(1) P_o = 1 W.
(2) P_o = 10 W.
Fig.22 Channel separation as a function of input
frequency.
0
handb_αoo_ck_s, halfpage
(dB)
− 20
MGX331
− 40
− 60
(1)
− 80
(2)
− 100
10
10²
10³
10⁴
10⁵
fi (Hz)
2 × 4 Ω SE; V_P = ±15 V.
(1) P_o = 1 W.
(2) P_o = 10 W.
Fig.23 Channel separation as a function of input
frequency.
40
handbook, halfpage
G
(dB)
35
30
25
MGX340
(1)
(2)
(3)
40
handbook, halfpage
G
(dB)
35
30
25
MGX341
(1)
(2)
(3)
20
10
10²
10³
10⁴
10⁵
fi (Hz)
V_i = 100 mV; R_s = 5.6 kΩ; C_i = 330 pF.
(1) 1 × 8 Ω BTL, V_P = ±15 V.
(2) 2 × 8 Ω SE, V_P = ±20 V.
(3) 2 × 4 Ω SE, V_P = ±15 V.
Fig.24 Gain as a function of input frequency.
20
10
10²
10³
10⁴
10⁵
fi (Hz)
V_i = 100 mV; R_s = 0 kΩ.
(1) 1 × 8 Ω BTL, V_P = ±15 V.
(2) 2 × 8 Ω SE, V_P = ±20 V.
(3) 2 × 4 Ω SE, V_P = ±15 V.
Fig.25 Gain as a function of input frequency.
2003 Mar 20
25