TDA8922 Datasheet, PDF (24/36 Pages) NXP Semiconductors – 2 x 25 W class-D power amplifier

Philips Semiconductors
2 × 25 W class-D power amplifier
Objective specification
TDA8922
10
handbook, halfpage
Pdiss
(W)
8
MGX332
6
(1)
(2)
4
(3)
2
0
10 ^−2
10 ^−1
1
10
10²
Po (W)
f_i = 1 kHz.
(1) 2 × 4 Ω SE, V_P = ±15 V.
(2) 2 × 8 Ω SE, V_P = ±20 V.
(3) 1 × 8 Ω BTL, V_P = ±15 V.
Fig.18 Power dissipation as a function of output
power.
100
handbook, halfpage
η
(1) ₍₂₎
(3)
(%)
80
MGX333
60
40
20
0
0
20
40
60
80
100
Po (W)
f_i = 1 kHz.
(1) 2 × 8 Ω SE, V_P = ±20 V.
(2) 2 × 4 Ω SE, V_P = ±15 V.
(3) 1 × 8 Ω BTL, V_P = ±15 V.
Fig.19 Efficiency as a function of output power.
100
handbook, halfpage
Po
(W)
80
(1)
60
40
(2)
20
MGX336
(3)
0
10
15
20
25
30
35
VDD (V)
THD + N = 0.5%; f_i = 1 kHz.
(1) 1 × 8 Ω BTL.
(2) 2 × 4 Ω SE.
(3) 2 × 8 Ω SE.
Fig.20 Output power as a function of supply
voltage.
2003 Mar 20
100
handbook, halfpage
Po
(1)
(W)
80
MGX337
60
(3)
(2)
40
20
0
10
15
20
25
30
35
VDD (V)
THD + N = 10%; f_i = 1 kHz.
(1) 1 × 8 Ω BTL.
(2) 2 × 4 Ω SE.
(3) 2 × 8 Ω SE.
Fig.21 Output power as a function of supply
voltage.
24