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TDA8589J Datasheet, PDF (24/55 Pages) NXP Semiconductors – I2C-bus controlled 4 45 Watt power amplifier and multiple voltage regulator
Philips Semiconductors
I2C-bus controlled 4 45 Watt power
amplier and multiple voltage regulator
Product specication
TDA8589J; TDA8589xJ
SYMBOL
cs
SVRR
CMRR
Vcm(max)(rms)
Vn(o)(LN)
Vn(o)(amp)
Gv(amp)
Gv(LN)
Zi
mute
Vo(mute)
Bp
PARAMETER
CONDITION
channel separation (crosstalk)
supply voltage ripple rejection
common mode ripple rejection
maximum common mode voltage
level (rms value)
noise output voltage in line driver
mode
noise output voltage in amplier
mode
voltage gain in amplier mode
f = 1 Hz to 10 kHz; Rsource = 600
Po = 4 W; f = 1 kHz
f = 100 Hz to 10 kHz;
Rsource = 600
amplier mode;
Vcommon = 0.3 V (p-p);
f = 1 kHz to 3 kHz; Rsource = 0
f = 1 kHz
lter 20 Hz to 22 kHz;
Rsource = 600
lter 20 Hz to 22 kHz;
Rsource = 600
single-ended in to differential out
voltage gain in line driver mode single-ended in to differential out
input impedance
mute attenuation
output voltage mute
power bandwidth
CIN = 220 nF
VO(on)/VO(mute)
VIN = 1 V (RMS)
1 dB; THD = 1 %
MIN. TYP. MAX. UNIT
50 60
dB
80
dB
55 70
dB
40 70
dB
0.6 V
25 35
V
50 70
V
25 26 27 dB
19 20 21 dB
55 70
k
80 90
dB
70
V
20
kHz
Voltage regulator section
Tamb = 25 C; VP = 14.4 V; measured in the test circuit Fig.28; unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
Supply
VP
supply voltage
regulator 1, 3, 4 and 5 on 10.0
14.4
regulator 2
switched on
4
in regulation
6.3
overvoltage for shut-down 18.1
22
Iq(tot)
total quiescent supply standby mode; note 1
150
current
Reset output (push-pull stage, pin RST)
VREG2(th)(r)
VREG2(th)(f)
Isink(L)
Isource(H)
tr
tf
rising threshold voltage
of regulator 2
falling threshold voltage
of regulator 2
LOW-level sink current
HIGH-level source
current
rise time
fall time
VP is rising;
IO(REG2) = 50 mA
VP is falling;
IO(REG2) = 50 mA
VRST 0.8 V
VRST = VO(REG2) 0.5 V;
VP = 14.4 V
note 2
note 2
VO(REG2)
0.2
VO(REG2)
0.25
1
200
VO(REG2)
0.1
VO(REG2)
0.15
600
2
10
MAX. UNIT
18
V
V
50
V
V
190
A
VO(REG2)
V
0.04
VO(REG2)
V
0.1
mA
A
50
s
50
s
2004 Feb 24
24