SA5200 Datasheet, PDF (2/14 Pages) NXP Semiconductors – RF dual gain-stage

Philips Semiconductors
RF dual gain-stage
Product specification
SA5200
DESCRIPTION
The SA5200 is a dual amplifier with DC to 1200MHz response. Low
noise (NF = 3.6dB) makes this part ideal for RF front-ends, and a
simple power-down mode saves current for battery operated
equipment. Inputs and outputs are matched to 50Ω.
The enable pin allows the designer the ability to turn the amplifiers
on or off, allowing the part to act as an amplifier as well as an
attenuator. This is very useful for front-end buffering in receiver
applications.
FEATURES
• Dual amplifiers
• DC - 1200MHz operation
• Low DC power consumption (4.2mA per amplifier @ V_CC = 5V)
• Power-Down Mode (I_CC = 95µA typical)
• 3.6dB noise figure at 900MHz
• Unconditionally stable
• Fully ESD protected
• Low cost
ORDERING INFORMATION
DESCRIPTION
8-Pin Plastic Small Outline (Surface–mount)
BLOCK DIAGRAM
IN_{2 4}
GND_{2 3}
PIN CONFIGURATION
D Package
V_C 1
OUT^C2 2
GND₂ 3
IN₂ 4
8 _OUT1
7 _GND1
6 _IN1
5 _ENABLE
Figure 1. Pin Configuration
• Supply voltage 4-9V
• Gain S₂₁ = 7dB at f = 1GHz
• Input and output match S₁₁, S₂₂ typically <–14dB
APPLICATIONS
• Cellular radios
• RF IF strips
• Portable equipment
SR00166
TEMPERATURE RANGE
–40-+85°C
ORDER CODE
SA5200D
DWG #
SOT96-1
OUT_{2 2}
V_{CC 1}
AMP2
AMP1
5
ENABLE
6
IN₁
7
GND₁
Figure 2. Block Diagram
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
V_CC
Supply voltage
Operating ambient temperature range
T_A
SA Grade
Operating junction temperature
T_J
SA Grade
8
OUT₁
RATING
4.0 to 9.0
-40 to +85
-40 to +105
SR00167
UNITS
V
°C
°C
1997 Nov 07
5–2
853-1578 18662