PMV31XN Datasheet, PDF (2/12 Pages) NXP Semiconductors – UTrenchMOS extremely low level FET

Philips Semiconductors
PMV31XN
µTrenchMOS™ extremely low level FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
V_DS
I_D
P_tot
T_j
R_DSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
25 °C ≤ T_j ≤ 150 °C
T_sp = 25 °C; V_GS = 4.5 V
T_sp = 25 °C
V_GS = 4.5 V; I_D = 1.5 A; T_j = 25 °C
V_GS = 2.5 V; I_D = 1 A; T_j = 25 °C
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DSR
V_GS
I_D
drain-source voltage (DC)
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
25 °C ≤ T_j ≤ 150 °C
25 °C ≤ T_j ≤ 150 °C; R_GS = 20 kΩ
T_sp = 25 °C; V_GS = 4.5 V; Figure 2 and 3
T_sp = 100 °C; V_GS = 4.5 V; Figure 2
T_sp = 25 °C; pulsed; t_p ≤ 10 µs; Figure 3
T_sp = 25 °C; Figure 1
I_S
source (diode forward) current (DC) T_sp = 25 °C
Typ
Max Unit
-
20
V
-
5.9
A
-
2
W
-
150
°C
31
37
mΩ
44
53
mΩ
Min
Max Unit
-
20
V
-
20
V
-
±12
V
-
5.9
A
-
3.75 A
-
23.7 A
-
2
W
−55
+150 °C
−55
+150 °C
-
1.7
A
9397 750 11066
Product data
Rev. 01 — 26 February 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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