PMV31XN Datasheet, PDF (1/12 Pages) NXP Semiconductors – UTrenchMOS extremely low level FET

PMV31XN
µTrenchMOS™ extremely low level FET
Rev. 01 — 26 February 2003
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PMV31XN in SOT23.
2. Features
s TrenchMOS™ technology
s Very fast switching
s Low threshold voltage
s Surface mount package.
3. Applications
s Battery powered motor control
s High-speed switch in set top box power supplies.
4. Pinning information
Table 1: Pinning - SOT23, simplified outline and symbol
Pin
Description
Simplified outline
1
gate (g)
3
2
source (s)
3
drain (d)
1
2
Top view
MSB003
SOT23
Symbol
d
g
MBB076
s