PMEG6030EP Datasheet, PDF (2/13 Pages) NXP Semiconductors – 3 A low VF MEGA Schottky barrier rectifier

NXP Semiconductors
PMEG6030EP
3 A low V_F MEGA Schottky barrier rectifier
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1] The marking bar indicates the cathode.
3. Ordering information
Simplified outline
[1]
1
2
Graphic symbol
1
2
sym001
Table 3. Ordering information
Type number Package
Name Description
PMEG6030EP -
plastic surface-mounted package; 2 leads
Version
SOD128
4. Marking
Table 4. Marking codes
Type number
PMEG6030EP
Marking code
AB
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
V_R
reverse voltage
T_j = 25 °C
-
I_F(AV)
average forward current
square wave;
δ = 0.5;
f = 20 kHz
T_amb ≤ 50 °C
[1] _-
T_sp ≤ 135 °C
-
I_FSM
non-repetitive peak
square wave;
[2] _-
forward current
t_p = 8 ms
P_tot
total power dissipation T_amb ≤ 25 °C
[3][4] _-
[3][5] _-
[3][1] _-
Max Unit
60
V
3
A
3
A
50
A
625
mW
1050 mW
2100 mW
PMEG6030EP_1
Product data sheet
Rev. 01 — 21 January 2010
© NXP B.V. 2010. All rights reserved.
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