PMEG6030EP Datasheet, PDF (1/13 Pages) NXP Semiconductors – 3 A low VF MEGA Schottky barrier rectifier

PMEG6030EP
3 A low V_F MEGA Schottky barrier rectifier
Rev. 01 — 21 January 2010
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features
„ Average forward current: I_F(AV) ≤ 3 A
„ Reverse voltage: V_R ≤ 60 V
„ Low forward voltage
„ High power capability due to clip-bond technology
„ AEC-Q101 qualified
„ Small and flat lead SMD plastic package
1.3 Applications
„ Low voltage rectification
„ High efficiency DC-to-DC conversion
„ Switch Mode Power Supply (SMPS)
„ Reverse polarity protection
„ Low power consumption applications
1.4 Quick reference data
Table 1. Quick reference data
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
I_F(AV)
average forward current
square wave;
δ = 0.5;
f = 20 kHz
T_amb ≤ 50 °C
[1] _-
-
3
T_sp ≤ 135 °C
-
-
3
V_R
reverse voltage
-
-
60
V_F
forward voltage
I_F = 3 A
-
460 530
I_R
reverse current
V_R = 60 V
-
80
200
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al₂O₃, standard footprint.
Unit
A
A
V
mV
μA