PHP6ND50E Datasheet, PDF (2/9 Pages) NXP Semiconductors – PowerMOS transistors FREDFET, Avalanche energy rated

Philips Semiconductors
PowerMOS transistors
FREDFET, Avalanche energy rated
Product specification
PHP6ND50E, PHB6ND50E
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
E_AS
E_AR
I_AS, I_AR
Non-repetitive avalanche
energy
Unclamped inductive load, I_AS = 4 A;
t_p = 0.17 ms; T_j prior to avalanche = 25˚C;
V_DD ≤ 50 V; R_GS = 50 Ω; V_GS = 10 V; refer
to fig:17
Repetitive avalanche energy¹ I_AR = 5.9 A; t_p = 1 µs; T_j prior to
avalanche = 25˚C; R_GS = 50 Ω; V_GS = 10 V;
refer to fig:18
Repetitive and non-repetitive
avalanche current
MIN.
-
-
-
MAX.
280
10
5.9
UNIT
mJ
mJ
A
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-mb}
R_{th j-a}
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
MIN. TYP. MAX. UNIT
-
-
1 K/W
SOT78 package, in free air
- 60 - K/W
SOT404 package, pcb mounted, minimum - 50 - K/W
footprint
1 pulse width and repetition rate limited by T_j max.
August 1998
2
Rev 1.100