PHP6ND50E Datasheet, PDF (1/9 Pages) NXP Semiconductors – PowerMOS transistors FREDFET, Avalanche energy rated

Philips Semiconductors
PowerMOS transistors
FREDFET, Avalanche energy rated
Product specification
PHP6ND50E, PHB6ND50E
FEATURES
SYMBOL
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
• Fast reverse recovery diode
d
g
s
QUICK REFERENCE DATA
V_DSS = 500 V
I_D = 5.9 A
R_DS(ON) ≤ 1.5 Ω
t_rr = 180 ns
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED).
This gives improved switching performance in half bridge and full bridge converters making this device particularly
suitable for inverters, lighting ballasts and motor control circuits.
The PHP6ND50E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB6ND50E is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN
DESCRIPTION
tab
tab
1 gate
2 drain ¹
3 source
tab drain
1 23
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_DSS
V_DGR
V_GS
I_D
I_DM
P_D
T_j, T_stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
T_j = 25 ˚C to 150˚C
T_j = 25 ˚C to 150˚C; R_GS = 20 kΩ
T_mb = 25 ˚C; V_GS = 10 V
T_mb = 100 ˚C; V_GS = 10 V
T_mb = 25 ˚C
T_mb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
500
500
± 30
5.9
3.7
24
125
150
UNIT
V
V
V
A
A
A
W
˚C
August 1998
1
Rev 1.100