English
Language : 

PHP125N06T Datasheet, PDF (2/8 Pages) NXP Semiconductors – TrenchMOS transistor Standard level FET
Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
PHP125N06T
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
in free air
TYP.
-
60
MAX.
0.6
-
UNIT
K/W
K/W
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
IDSS
IGSS
±V(BR)GSS
RDS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Gate source leakage current
Gate-source breakdown
voltage
Drain-source on-state
resistance
VGS = 0 V; ID = 0.25 mA;
Tj = -55˚C
VDS = VGS; ID = 1 mA
Tj = 175˚C
Tj = -55˚C
VDS = 55 V; VGS = 0 V;
Tj = 175˚C
VGS = ±10 V; VDS = 0 V
Tj = 175˚C
IG = ±1 mA;
VGS = 10 V; ID = 25 A
Tj = 175˚C
MIN.
55
50
2
1
-
-
-
-
-
16
TYP.
-
-
3.0
-
-
0.05
-
0.02
-
-
MAX.
-
-
4.0
-
4.4
10
500
1
20
-
UNIT
V
V
V
V
V
µA
µA
µA
µA
V
-
6.5
8 mΩ
-
-
17 mΩ
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
SYMBOL PARAMETER
gfs
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td on
tr
td off
tf
Ld
Forward transconductance
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Input capacitance
Output capacitance
Feedback capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Ld
Internal drain inductance
Ls
Internal source inductance
CONDITIONS
VDS = 25 V; ID = 25 A
ID = 50 A; VDD = 44 V; VGS = 10 V
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 30 V; ID = 25 A;
VGS = 10 V; RG = 10 Ω
Resistive load
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
MIN.
10
-
-
-
-
-
-
-
-
-
-
-
TYP.
45
86
21
34
3600
830
320
27
70
100
50
3.5
MAX.
-
-
-
-
4500
1000
440
40
105
140
70
-
UNIT
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
-
4.5
-
nH
-
7.5
-
nH
December 1997
2
Rev 1.100