PBSS9410PA_15 Datasheet, PDF (2/15 Pages) NXP Semiconductors – 100 V, 2.7 A PNP low VCEsat (BISS) transistor

NXP Semiconductors
PBSS9410PA
100 V, 2.7 A PNP low V_CEsat (BISS) transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
base
emitter
collector
Simplified outline Graphic symbol
3
1
2
Transparent top view
3
1
2
sym013
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
Version
PBSS9410PA HUSON3 plastic thermal enhanced ultra thin small outline package; SOT1061
no leads; three terminals; body 2 × 2 × 0.65 mm
4. Marking
Table 4. Marking codes
Type number
PBSS9410PA
Marking code
AG
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
V_CBO
collector-base voltage
open emitter
-
V_CEO
collector-emitter voltage open base
-
V_EBO
emitter-base voltage
open collector
-
I_C
collector current
-
I_CM
peak collector current
single pulse;
-
t_p ≤ 1 ms
I_B
base current
-
P_tot
total power dissipation
T_amb ≤ 25 °C
[1] _-
[2] _-
[3] _-
[4] _-
Max Unit
−100 V
−100 V
−7
V
−2.7 A
−4
A
−600 mA
500
mW
1
W
1.4
W
2.1
W
PBSS9410PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 11 May 2010
© NXP B.V. 2010. All rights reserved.
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