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PBSS9410PA_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 100 V, 2.7 A PNP low VCEsat (BISS) transistor | |||
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PBSS9410PA
100 V, 2.7 A PNP low VCEsat (BISS) transistor
Rev. 01 â 11 May 2010
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra
thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
medium power capability.
NPN complement: PBSS8510PA.
1.2 Features and benefits
 Low collector-emitter saturation voltage VCEsat
 High collector current capability IC and ICM
 Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
 Exposed heat sink for excellent thermal and electrical conductivity
 Leadless small SMD plastic package with medium power capability
1.3 Applications
 Loadswitch
 Battery-driven devices
 Power management
 Charging circuits
 Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
RCEsat
collector-emitter
saturation resistance
[1] Pulse test: tp ⤠300 μs; δ ⤠0.02.
Conditions
open base
single pulse;
tp ⤠1 ms
IC = â2.7 A;
IB = â135 mA
Min Typ Max Unit
-
-
â100 V
-
-
â2.7 A
-
-
â4
A
[1] -
110 166 mΩ
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