EFD25 Datasheet, PDF (2/6 Pages) NXP Semiconductors – EFD cores and accessories

Philips Components
EFD cores and accessories
Product specification
EFD25
CORES
Effective core parameters
SYMBOL
PARAMETER
Σ(I/A)
core factor (C1)
V_e
I_e
A_e
A_min
m
effective volume
effective length
effective area
minimum area
mass of core half
VALUE UNIT
1.00
3 300
mm^−1
mm³
57.0
58.0
55
mm
mm²
mm²
≈8
g
handbook, halfpage
9.3
12.5 _0.25
0.15
9.1 _0.6
0.2
25 0.65
18.7 0.6
11.4
0.2
MGC342
5.2
0.15
Dimensions in mm.
Fig.1 EFD25 core half.
Core halves
Gapped cores are available on request. Clamping force 40 ±20 N.
GRADE
3C30
3C85
3C90
3F3
3F4
A_L
(nH)
1800 ±25%
2200 ±25%
2200 ±25%
2000 ±25%
1000 ±25%
µ_e
≈1 450
≈1 780
≈1 780
≈1 600
≈800
AIR GAP
(µm)
≈0
≈0
≈0
≈0
≈0
TYPE NUMBER
EFD25-3C30
EFD25-3C85
EFD25-3C90
EFD25-3F3
EFD25-3F4
Properties of core sets under power conditions
B (mT) at
CORE LOSS (W) at
GRADE
3C30
3C85
3C90
3F3
3F4
H = 250 A/m;
f = 25 kHz;
T = 100 °C
≥360
≥320
≥330
≥315
≥300
f = 25 kHz;
B^ˆ = 200 mT;
T = 100 °C
≤0.35
≤0.50
≤0.35
−
−
f = 100 kHz;
B^ˆ = 100 mT;
T = 100 °C
≤0.38
≤0.60
≤0.38
≤0.38
−
f = 400 kHz;
B^ˆ = 50 mT;
T = 100 °C
−
−
−
≤0.66
−
f = 1 MHz;
B^ˆ = 30 mT;
T = 100 °C
−
−
−
−
≤0.70
f = 3 MHz;
B^ˆ = 10 mT;
T = 100 °C
−
−
−
−
≤1.10
1997 Nov 21
2