BYW29EX Datasheet, PDF (2/6 Pages) NXP Semiconductors – Rectifier diodes ultrafast, rugged

Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYW29EX series
ESD LIMITING VALUE
SYMBOL PARAMETER
V_C
Electrostatic discharge
capacitor voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
-
MAX.
8
UNIT
kV
ISOLATION LIMITING VALUE & CHARACTERISTIC
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_isol
R.M.S. isolation voltage from f = 50-60 Hz; sinusoidal
both terminals to external
waveform;
heatsink
R.H. ≤ 65% ; clean and dustfree
C_isol
Capacitance from both terminals f = 1 MHz
to external heatsink
MIN. TYP. MAX. UNIT
-
2500 V
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-hs}
R_{th j-a}
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air
MIN.
-
-
-
TYP.
-
-
55
MAX.
5.5
7.2
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
V_F
Forward voltage
I_R
Reverse current
DYNAMIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
Q_s
Reverse recovery charge
t_rr1
Reverse recovery time
t_rr2
Reverse recovery time
V_fr
Forward recovery voltage
CONDITIONS
I_F = 8 A; T_j = 150˚C
I_F = 8 A
I_F = 20 A
V_R = V_RWM; T_j = 100 ˚C
V_R = V_RWM
MIN.
-
-
-
-
-
TYP.
0.80
0.92
1.1
0.2
2
MAX.
0.895
1.05
1.3
0.6
10
UNIT
V
V
V
mA
µA
CONDITIONS
I_F = 2 A; V_R ≥ 30 V; -dI_F/dt = 20 A/µs
I_F = 1 A; V_R ≥ 30 V;
-dI_F/dt = 100 A/µs
I_F = 0.5 A to I_R = 1 A; I_rec = 0.25 A
I_F = 1 A; dI_F/dt = 10 A/µs
MIN.
-
-
-
-
TYP.
4
20
15
1
MAX. UNIT
11 nC
25 ns
20 ns
-
V
October 1998
2
Rev 1.200