BYW29EX Datasheet, PDF (1/6 Pages) NXP Semiconductors – Rectifier diodes ultrafast, rugged

Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYW29EX series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated epitaxial rectifier
diodes in a full pack plastic envelope,
featuring low forward voltage drop,
ultra-fast recovery times, soft recovery
characteristic and guaranteed reverse
surge and ESD capability. They are
intended for use in switched mode power
supplies and high frequency circuits in
general where low conduction and
switching losses are essential.
SYMBOL
V_RRM
V_F
I_F(AV)
t_rr
I_RRM
PARAMETER
BYW29EX-
Repetitive peak reverse
voltage
Forward voltage
Forward current
Reverse recovery time
Repetitive peak reverse
current
MAX.
150
150
0.895
8
25
0.2
MAX.
200
200
0.895
8
25
0.2
UNIT
V
V
A
ns
A
PINNING - SOD113
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
case
1 cathode
2 anode
case isolated
k
a
1
2
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RRM
V_RWM
V_R
I_F(AV)
I_F(RMS)
I_FRM
I_FSM
I²t
I_RRM
I_RSM
T_stg
T_j
Repetitive peak reverse voltage
-
Crest working reverse voltage
-
Continuous reverse voltage
-
Average forward current¹
square wave; δ = 0.5;
T_hs ≤ 106 ˚C
-
sinusoidal; a = 1.57;
T_hs ≤ 109 ˚C
-
RMS forward current
-
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
T_hs ≤ 106 ˚C
Non-repetitive peak forward t = 10 ms
-
current
t = 8.3 ms
-
sinusoidal; with reapplied
I²t for fusing
V_RWM(max)
t = 10 ms
-
Repetitive peak reverse current t_p = 2 µs; δ = 0.001
-
Non-repetitive peak reverse t_p = 100 µs
-
current
Storage temperature
-40
Operating junction temperature
-
MAX.
-150
150
150
150
-200
200
200
200
8
7.3
11.3
16
80
88
32
0.2
0.2
150
150
UNIT
V
V
V
A
A
A
A
A
A
A²s
A
A
˚C
˚C
1 Neglecting switching and reverse current losses
October 1998
1
Rev 1.200