BYV40E Datasheet, PDF (2/6 Pages) NXP Semiconductors – Rectifier diodes ultrafast, rugged

Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYV40E series
ESD LIMITING VALUE
SYMBOL PARAMETER
V_C
Electrostatic discharge
capacitor voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
-
MAX.
8
UNIT
kV
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-sp}
R_{th j-a}
Thermal resistance
junction to solder point
Thermal resistance
junction to ambient
CONDITIONS
one or both diodes conducting
pcb mounted; minimum footprint
pcb mounted; pad area as in fig:11
MIN. TYP. MAX. UNIT
-
-
15 K/W
- 156 - K/W
-
70
- K/W
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
V_F
Forward voltage
I_F = 0.5 A; T_j = 150˚C
I_F = 1.5 A
I_R
Reverse current
V_R = V_RWM; T_j = 100 ˚C
V_R = V_RWM
Q_s
Reverse recovery charge
I_F = 2 A; V_R ≥ 30 V; -dI_F/dt = 20 A/µs
t_rr1
Reverse recovery time
I_F = 1 A; V_R ≥ 30 V;
-dI_F/dt = 100 A/µs
t_rr2
Reverse recovery time
I_F = 0.5 A to I_R = 1 A; I_rec = 0.25 A
V_fr
Forward recovery voltage
I_F = 2 A; dI_F/dt = 20 A/µs
MIN.
-
-
-
-
-
-
-
-
TYP.
0.50
0.82
100
5
-
-
10
3
MAX.
0.7
1.0
300
10
11
25
UNIT
V
V
µA
µA
nC
ns
20 ns
-
V
September 1998
2
Rev 1.300