BYV40E Datasheet, PDF (1/6 Pages) NXP Semiconductors – Rectifier diodes ultrafast, rugged

Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYV40E series
FEATURES
SYMBOL
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• low profile surface mounting
package
a1
a2
1
3
k2
QUICK REFERENCE DATA
V_R = 150 V/ 200 V
V_F ≤ 0.7 V
I_O(AV) = 1.5 A
I_RRM = 0.1 A
t_rr ≤ 25 ns
GENERAL DESCRIPTION
Dual, common cathode, ultra-fast,
epitaxial rectifier diodes intended
for use as output rectifiers in high
frequency switched mode power
supplies.
The BYV40E series is supplied in
the SOT223 surface mounting
package.
PINNING
PIN
DESCRIPTION
1 anode 1
2 cathode
3 anode 2
tab cathode
SOT223
4
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RRM
V_RWM
V_R
I_O(AV)
I_FRM
I_FSM
I_RRM
I_RSM
T_stg
T_j
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
T_sp ≤ 120˚C
BYV40E
-
-
-
Average rectified output current square wave; δ = 0.5;
-
(both diodes conducting)¹
T_sp ≤ 132˚C
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
per diode
T_sp ≤ 132 ˚C
Non-repetitive peak forward t_p = 10 ms
-
current per diode
t_p = 8.3 ms
-
sinusoidal; T_j = 150˚C prior
to surge; with reapplied
V_RWM(max)
Repetitive peak reverse current t_p = 2 µs; δ = 0.001
-
per diode
Non-repetitive peak reverse t_p = 100 µs
-
current per diode
Storage temperature
-65
Operating junction temperature
-
MAX.
-150
150
150
150
-200
200
200
200
1.5
1.5
6
6.6
0.1
0.1
150
150
UNIT
V
V
V
A
A
A
A
A
A
˚C
˚C
1 Neglecting switching and reverse current losses
September 1998
1
Rev 1.300