BYD127 Datasheet, PDF (2/8 Pages) NXP Semiconductors – Ultra fast low-loss rectifier

Philips Semiconductors
Ultra fast low-loss rectifier
Product specification
BYD127
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Available in ammo-pack
• Smallest surface mount rectifier
outline.
DESCRIPTION
Cavity free cylindrical glass SOD87
package through Implotec™⁽¹⁾
technology. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
handbook, 4 columns
k
a
MAM061
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_RRM
V_R
I_F(AV)
repetitive peak reverse voltage
continuous reverse voltage
average forward current
I_FSM
non-repetitive peak forward current
T_stg
storage temperature
T_j
junction temperature
CONDITIONS
T_tp = 145 °C;
averaged over any 20 ms period;
see Figs 5 and 6
T_tp = 95 °C;
averaged over any 20 ms period;
see Figs 5 and 6
t = 10 ms half sinewave;
V_R = V_RRMmax
MIN.
−
−
−
MAX.
200
200
1
UNIT
V
V
A
−
2
A
−
25
A
−65
+175 °C
−65
+175 °C
ELECTRICAL CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V_F
forward voltage
I_R
reverse current
t_rr
reverse recovery time
CONDITIONS
I_F = 1 A; see Fig.2; T_j = 150 °C;
I_F = 1 A; see Fig.2
V_R = V_RRMmax; see Fig.3
V_R = V_RRMmax; T_j = 150 °C; see Fig.3
when switched from I_F = 0.5 A to I_R = 1 A;
measured at I_R = 0.25 A
MAX.
0.8
0.93
2
50
25
UNIT
V
V
µA
µA
ns
1999 Nov 15
2