BY459F-1500 Datasheet, PDF (2/6 Pages) NXP Semiconductors – Rectifier diode fast, high-voltage

Philips Semiconductors
Rectifier diode
fast, high-voltage
Product specification
BY459F-1500
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-hs}
R_{th j-a}
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air
MIN.
-
-
-
TYP.
-
-
55
MAX.
4.8
5.9
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
V_F
Forward voltage
I_R
Reverse current
DYNAMIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
V_fr
Forward recovery voltage
t_fr
Forward recovery time
t_rr
Reverse recovery time
Q_s
Reverse recovery charge
CONDITIONS
I_F = 6.5 A
I_F = 6.5 A; T_j = 125 ˚C
V_R = V_RWMmax
V_R = V_RWMmax; T_j = 125 ˚C
MIN.
-
-
-
-
TYP.
0.95
0.85
-
-
MAX.
1.3
1.2
0.25
1.0
UNIT
V
V
mA
mA
CONDITIONS
I_F = 6.5 A; dI_F/dt = 50 A/µs
I_F = 6.5 A; dI_F/dt = 50 A/µs; V_F = 5 V
I_F = 6.5 A; dI_F/dt = 50 A/µs; V_F = 2 V
I_F = 1 A; -dI_F/dt = 50 A/µs; V_R ≥ 30 V
I_F = 2 A; -dI_F/dt = 20 A/µs; V_R ≥ 30 V
MIN.
-
-
-
-
-
TYP.
8
170
350
250
2.0
MAX.
14
250
-
350
3.0
UNIT
V
ns
ns
ns
µC
August 1996
2
Rev 1.200