BY459F-1500 Datasheet, PDF (1/6 Pages) NXP Semiconductors – Rectifier diode fast, high-voltage

Philips Semiconductors
Rectifier diode
fast, high-voltage
Product specification
BY459F-1500
GENERAL DESCRIPTION
Glass-passivated double diffused
rectifier diode in a full pack plastic
envelope, featuring fast forward
recovery and low forward recovery
voltage. The device is intended for
use in multi-sync monitor horizontal
deflection circuits.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V_RRM
V_F
I_FWM
I_FRM
t_fr
V_fr
Repetitive peak reverse voltage
Forward voltage
Working peak forward current
Repetitive peak forward current
Forward recovery time
Forward recovery voltage
PINNING - SOD100
PIN
DESCRIPTION
1 cathode
2 anode
case isolated
PIN CONFIGURATION
case
SYMBOL
k
1
MAX. UNIT
1500 V
1.2
V
10
A
100 A
250 ns
14
V
a
2
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
V_RSM
V_RRM
V_RWM
I_FWM
I_FRM
I_FSM
T_stg
T_j
Non-repetitive peak reverse
voltage during flash-over of
picture tube
Repetitive peak reverse voltage t = 6 µs; f = 82kHz
Crest working reverse voltage
Working peak forward current¹ f = 82kHz; T_hs ≤ 127 ˚C
Repetitive peak forward current t = 100 µs
Non-repetitive peak forward t = 10 ms
current
t = 8.3 ms
Storage temperature
sinusoidal; T_j = 150 ˚C prior to
surge; with reapplied V_RWM(max)
Operating junction temperature
ISOLATION LIMITING VALUE & CHARACTERISTIC
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_isol
Repetitive peak voltage from R.H. ≤ 65% ; clean and dustfree
both terminals to external
heatsink
C_isol
Capacitance from cathode to f = 1 MHz
external heatsink
MIN.
-
-
-
-
-
-
-
-40
-
MAX.
1500
UNIT
V
1500
V
1300
V
10
A
100
A
100
A
110
A
150
˚C
150
˚C
MIN. TYP. MAX. UNIT
-
1500 V
-
12
-
pF
1 Including worst case forward recovery losses, see fig:5.
August 1996
1
Rev 1.200