BY359DX-1500 Datasheet, PDF (2/4 Pages) NXP Semiconductors – Rectifier diode fast, high-voltage

Philips Semiconductors
Rectifier diode
fast, high-voltage
Objective specification
BY359DX-1500
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-hs}
R_{th j-a}
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air.
MIN.
-
-
-
TYP.
-
-
tbf
MAX.
tbf
tbf
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
V_F
Forward voltage
I_R
Reverse current
CONDITIONS
I_F = 20 A
I_F = 10 A; T_j = 150˚C
V_R = 1300 V
V_R = 1300 V; T_j = 100 ˚C
MIN.
-
-
-
-
TYP.
1.3
1.00
10
50
MAX.
1.8
1.5
100
300
UNIT
V
V
µA
µA
DYNAMIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
t_rr
Reverse recovery time
Q_s
Reverse recovery charge
V_fr
Peak forward recovery voltage
CONDITIONS
I_F = 2 A; V_R ≥ 30 V; -dI_F/dt = 20 A/µs
I_F = 2 A; V_R ≥ 30 V; -dI_F/dt = 20 A/µs
I_F = 10 A; dI_F/dt = 30 A/µs
MIN.
-
-
-
TYP.
0.47
1.6
11.0
MAX.
0.6
2.0
-
UNIT
µs
µC
V
April 1998
2
Rev 1.000