BY359DX-1500 Datasheet, PDF (1/4 Pages) NXP Semiconductors – Rectifier diode fast, high-voltage

Philips Semiconductors
Rectifier diode
fast, high-voltage
Objective specification
BY359DX-1500
FEATURES
SYMBOL
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
k
a
• Isolated mounting tab
1
2
GENERAL DESCRIPTION
Glass-passivated double diffused
rectifier diode featuring low forward
voltage drop, fast reverse recovery
and soft recovery characteristic.
The device is intended for use in TV
receivers, series resonant switched
mode power supplies and other
high voltage circuits.
The BY359DX series is supplied in
the conventional leaded SOD117
package.
PINNING
PIN
DESCRIPTION
1 cathode
2 anode
tab isolated
QUICK REFERENCE DATA
V_R = 1500 V
V_F ≤ 1.5 V
I_F(AV) = 10 A
I_FSM ≤ 60 A
t_rr ≤ 600 ns
SOD117
case
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
V_RSM
V_RRM
V_RWM
I_F(AV)
I_F(RMS)
I_FRM
I_FSM
I²t
T_stg
T_j
Peak non-repetitive reverse
voltage
Peak repetitive reverse voltage
Crest working reverse voltage
Average forward current
RMS forward current
Peak repetitive forward current
Peak non-repetitive forward
current
I²t for fusing
Storage temperature
Operating junction temperature
sinusoidal; a = 1.57; T_hs = tbf
sinusoidal; a = 1.57
t = 10 ms
t = 8.3 ms
half sine wave; T_j = 150 ˚C prior to
surge; with reapplied V_RWM(max)
t = 10 ms
MIN.
-
-
-
-
-
-
-
-
-
-40
-
MAX.
1500
1500
1300
10
20
60
60
66
UNIT
V
V
V
A
A
A
A
A
18
A²s
150
˚C
150
˚C
ISOLATION LIMITING VALUE & CHARACTERISTIC
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_isol
R.M.S. isolation voltage from f = 50-60 Hz; sinusoidal
both terminals to external
waveform;
heatsink
R.H. ≤ 65% ; clean and dustfree
C_isol
Capacitance from both terminals f = 1 MHz
to external heatsink
MIN. TYP. MAX. UNIT
-
2500 V
-
10
-
pF
April 1998
1
Rev 1.000