BY329X Datasheet, PDF (2/6 Pages) NXP Semiconductors – Rectifier diodes fast, soft-recovery

Philips Semiconductors
Rectifier diodes
fast, soft-recovery
Product specification
BY329X series
ISOLATION LIMITING VALUE & CHARACTERISTIC
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_isol
R.M.S. isolation voltage from f = 50-60 Hz; sinusoidal
both terminals to external
waveform;
heatsink
R.H. ≤ 65% ; clean and dustfree
C_isol
Capacitance from both terminals f = 1 MHz
to external heatsink
MIN. TYP. MAX. UNIT
-
2500 V
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-hs}
R_{th j-a}
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air.
MIN.
-
-
-
TYP.
-
-
55
MAX.
4.8
5.9
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
V_F
Forward voltage
I_R
Reverse current
CONDITIONS
I_F = 20 A
V_R = V_RWM; T_j = 125 ˚C
MIN.
-
-
TYP. MAX. UNIT
1.5 1.85 V
0.1 1.0 mA
DYNAMIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
t_rr
Q_s
dI_R/dt
Reverse recovery time
Reverse recovery charge
Maximum slope of the reverse
recovery current
CONDITIONS
I_F = 1 A; V_R > 30 V; -dI_F/dt = 50 A/µs
I_F = 2 A; V_R > 30 V; -dI_F/dt = 20 A/µs
I_F = 2 A; -dI_F/dt = 20 A/µs
MIN.
-
-
-
TYP.
125
0.5
50
MAX.
145
0.7
60
UNIT
ns
µC
A/µs
May 1995
2
Rev 1.000