BY329X Datasheet, PDF (1/6 Pages) NXP Semiconductors – Rectifier diodes fast, soft-recovery

Philips Semiconductors
Rectifier diodes
fast, soft-recovery
Product specification
BY329X series
GENERAL DESCRIPTION
Glass-passivated double diffused
rectifier diodes in a full pack plastic
envelope featuring low forward
voltage drop, fast reverse recovery
and soft recovery characteristic. The
devices are intended for use in TV
receivers, monitors and switched
mode power supplies.
PINNING - SOD113
PIN
DESCRIPTION
1 cathode
2 anode
case isolated
QUICK REFERENCE DATA
SYMBOL PARAMETER
V_RRM
I_F(AV)
I_FSM
t_rr
BY329X
Repetitive peak reverse
voltage
Average forward current
Non-repetitive peak
forward current
Reverse recovery time
MAX. MAX. MAX. UNIT
-800 -1000 -1200
800 1000 1200 V
8
8
8
A
65 65 65 A
145 145 145 ns
PIN CONFIGURATION
SYMBOL
case
k
a
1
2
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RSM
V_RRM
V_RWM
I_F(AV)
I_F(RMS)
I_FRM
I_FSM
I²t
T_stg
T_j
Non-repetitive peak reverse
-
voltage
Repetitive peak reverse voltage
-
Crest working reverse voltage
-
Average forward current¹
square wave; δ = 0.5;
-
T_hs ≤ 83 ˚C
sinusoidal; a = 1.57;
-
T_hs ≤ 90 ˚C
RMS forward current
-
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
T_hs ≤ 83 ˚C
Non-repetitive peak forward t = 10 ms
-
current.
t = 8.3 ms
-
sinusoidal; T_j = 150 ˚C prior
to surge; with reapplied
I²t for fusing
V_RWM(max)
t = 10 ms
-
Storage temperature
-40
Operating junction temperature
-
MAX.
UNIT
-800 -1000 -1200
800 1000 1200 V
800 1000 1200 V
600 800 1000 V
8
A
7
A
11
A
16
A
65
A
71
A
28
A²s
150
˚C
150
˚C
1 Neglecting switching and reverse current losses.
May 1995
1
Rev 1.000