BY278 Datasheet, PDF (2/7 Pages) NXP Semiconductors – Damper diode

Philips Semiconductors
Damper diode
Product specification
BY278
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Available in ammo-pack
• Also available with preformed leads
for easy insertion.
APPLICATIONS
• Damper diode in high frequency
horizontal deflection circuits up to
16 kHz.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
,^{2/3 pagek(Datasheet)}
a
MAM104
Fig.1 Simplified outline (SOD64) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_RSM
V_RRM
V_R
I_FWM
I_FRM
I_FSM
T_stg
T_j
non-repetitive peak reverse voltage
repetitive peak reverse voltage
continuous reverse voltage
working peak forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
T_amb = 75 °C; PCB mounting (see
Fig.4); see Fig.2
t = 10 ms half sinewave;
T_j = T_{j max} prior to surge;
V_R = V_RRMmax
MIN.
−
−
−
−
−
−
−65
−65
MAX.
1 700
1 700
1 650
5
UNIT
V
V
V
A
10 A
50 A
+175 °C
+150 °C
ELECTRICAL CHARACTERISTICS
T_j = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
V_F
forward voltage
I_R
reverse current
t_rr
reverse recovery time
t_fr
forward recovery time
CONDITIONS
I_F = 5 A; T_j = T_{j max}; see Fig.3
I_F = 5 A; see Fig.3
V_R = V_Rmax; T_j = 150 °C
when switched from I_F = 0.5 A to I_R = 1 A;
measured at I_R = 0.25 A; see Fig.6
when switched to I_F = 5 A in 50 ns;
T_j = T_{j max}; Fig.7
MAX.
1.4
1.5
150
1
UNIT
V
V
µA
µs
1 µs
1996 Sep 26
2