BUK7107-55AIE Datasheet, PDF (2/15 Pages) NXP Semiconductors – TrenchPLUS standard level FET

Philips Semiconductors
BUK71/7907-55AIE
TrenchPLUS standard level FET
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGS
V_GS
I_D
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
I_DG = 250 µA
T_mb = 25 °C; V_GS = 10 V;
Figure 2 and 3
I_DM
P_tot
I_GS(CL)
peak drain current
total power dissipation
gate-source clamping current
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
I_DR
reverse drain current
T_mb = 100 °C; V_GS = 10 V; Figure 2
T_mb = 25 °C; pulsed; t_p ≤ 10 µs;
Figure 3
T_mb = 25 °C; Figure 1
continuous
t_p = 5 ms; δ = 0.01
T_mb = 25 °C
I_DRM
peak reverse drain current
Avalanche ruggedness
T_mb = 25 °C; pulsed; t_p ≤ 10 µs
E_DS(AL)S
non-repetitive drain-source avalanche
energy
Electrostatic Discharge
unclamped inductive load; I_D = 68 A;
V_DS ≤ 55 V; V_GS = 10 V; R_GS = 50 Ω;
starting T_j = 25 °C
V_esd
electrostatic discharge voltage; all pins Human Body Model; C = 100 pF;
R = 1.5 kΩ
Min
-
-
-
[1] _-
[2] _-
[2] _-
-
-
-
-
−55
−55
[1] _-
[2] _-
-
-
[1] Current is limited by power dissipation chip rating
[2] Continuous current is limited by package.
Max Unit
55
V
55
V
±20 V
140 A
75
A
75
A
560 A
272 W
10
mA
50
mA
+175 °C
+175 °C
140 A
75
A
560 A
460 mJ
6
kV
9397 750 09877
Product data
Rev. 01 — 12 August 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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