BUK7107-55AIE Datasheet, PDF (1/15 Pages) NXP Semiconductors – TrenchPLUS standard level FET

BUK71/7907-55AIE
TrenchPLUS standard level FET
Rev. 01 — 12 August 2002
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance, TrenchPLUS
current sensing and diodes for ESD protection.
Product availability:
BUK7107-55AIE in SOT426 (D²-PAK)
BUK7907-55AIE in SOT263B (TO-220AB).
1.2 Features
s Integrated current sensor
s ESD protection
s Q101 compliant
s Standard level compatible.
1.3 Applications
s Variable Valve Timing for engines
s Electrical Power Assisted Steering.
1.4 Quick reference data
s V_DS ≤ 55 V
s I_D ≤ 140 A
s R_DSon = 5.8 mΩ (typ)
s I_D/I_sense = 500 (typ).
2. Pinning information
Table 1: Pinning - SOT426 and SOT263B, simplified outline and symbol
Pin Description
Simplified outline
Symbol
1 gate (g)
2
I_sense
3 drain (d)
mb
d
mb
4 Kelvin source
g
12 345
5 source (s)
mb mounting base;
connected to drain (d)
Front view
MBK127
SOT426 (D²-PAK)
1
5
MBL263
SOT263B (TO-220AB)
MBL368
s
Isense
Kelvin source