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BUK565-200A Datasheet, PDF (2/7 Pages) NXP Semiconductors – PowerMOS transistor Logic level FET
◁
Philips Semiconductors
PowerMOS transistor
Logic level FET
Product specification
BUK565-200A
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V(BR)DSS
VGS(TO)
IDSS
IDSS
IGSS
RDS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
CONDITIONS
VGS = 0 V; ID = 0.25 mA
VDS = VGS; ID = 1 mA
VDS = 200 V; VGS = 0 V; Tj = 25 ˚C
VDS = 200 V; VGS = 0 V; Tj =125 ˚C
VGS = ±10 V; VDS = 0 V
VGS = 5 V; ID = 7 A
MIN. TYP. MAX. UNIT
200 -
-
V
1.0 1.5 2.0 V
-
1
10 µA
-
0.1 1.0 mA
-
10 100 nA
-
0.2 0.23 Ω
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
gfs
Forward transconductance
Ciss
Input capacitance
Coss
Output capacitance
Crss
Feedback capacitance
td on
Turn-on delay time
tr
Turn-on rise time
td off
Turn-off delay time
tf
Turn-off fall time
Ld
Internal drain inductance
Ls
Internal source inductance
CONDITIONS
VDS = 25 V; ID = 7 A
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 30 V; ID = 3 A;
VGS = 5 V; RGS = 50 Ω;
Rgen = 50 Ω
Measured from upper edge of drain
tab to centre of die
Measured from source lead
soldering point to source bond pad
MIN.
8.0
-
-
-
-
-
-
-
-
-
TYP.
15
1600
180
55
25
45
140
40
2.5
7.5
MAX.
-
2000
250
80
40
75
180
55
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR
Continuous reverse drain
-
current
IDRM
Pulsed reverse drain current -
VSD
Diode forward voltage
IF = 14 A ; VGS = 0 V
trr
Reverse recovery time
IF = 14 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = 0 V; VR = 30 V
AVALANCHE LIMITING VALUE
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
WDSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
ID = 14 A ; VDD ≤ 100 V ;
VGS = 5 V ; RGS = 50 Ω
MIN. TYP. MAX. UNIT
-
-
14
A
-
-
56
A
-
1.0 1.5 V
- 200 -
ns
- 0.25 -
µC
MIN. TYP. MAX. UNIT
-
- 100 mJ
February 1996
2
Rev 1.000
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