 English |
|
|
|
|
|
|
|
| BUJ205A Datasheet, PDF (2/4 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
| |||
| ◁ |
Philips Semiconductors
Silicon Diffused Power Transistor
Objective specification
BUJ205A
STATIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
ICES
Collector cut-off current 1
ICES
IEBO
VCEOsust
Emitter cut-off current
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ËC
VEB = 9 V; IC = 0 A
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 5 A; IB = 1.0 A
IC = 6 A; IB = 1.2 A
IC = 10 mA; VCE = 5 V
IC = 1.0A; VCE = 5 V
MIN.
-
-
-
450
-
-
10
10
TYP. MAX. UNIT
-
1 mA
-
3 mA
-
10 mA
-
-
V
-
1.5
V
-
1.5
V
-
35
-
35
DYNAMIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
Switching times (resistive load)
ton
Turn-on time
ts
Turn-off storage time
tf
Turn-off fall time
Switching times (inductive load)
ts
Turn-off storage time
tf
Turn-off fall time
Switching times (inductive load)
ts
Turn-off storage time
tf
Turn-off fall time
CONDITIONS
ICon = 6.0 A; IBon = -IBoff = 1.2 A;
RL = 75 ohms; VBB2 = 4 V;
ICon = 6.0 A; IBon = 1.2 A; LB = 1 µH;
-VBB = 5 V
ICon = 6.0 A; IBon = 1.2 A; LB = 1 µH;
-VBB = 5 V; Tj = 100 ËC
TYP. MAX. UNIT
-
1.0 µs
-
4
µs
-
0.8 µs
-
1.5 µs
-
300 ns
-
2.5 µs
-
300 ns
1 Measured with half sine-wave voltage (curve tracer).
August 1998
2
Rev 1.000
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese