BUJ205A Datasheet, PDF (1/4 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Objective specification
BUJ205A
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
systems, etc.
QUICK REFERENCE DATA
SYMBOL
V_CESM
V_CBO
V_CEO
I_C
I_CM
P_tot
V_CEsat
t_f
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Fall time
CONDITIONS
V_BE = 0 V
T_mb ≤ 25 ˚C
I_C = 5.0 A;I_B = 1.0 A
Ic=6A,I_B1=1.2A
TYP.
-
-
-
-
-
-
-
-
MAX.
850
850
450
8
12
125
1.5
300
UNIT
V
V
V
A
A
W
V
µs
PINNING - TO220AB
PIN
DESCRIPTION
1 base
2 collector
3 emitter
tab collector
PIN CONFIGURATION
tab
1 23
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_CESM
V_CEO
V_CBO
I_C
I_CM
I_B
I_BM
P_tot
T_stg
T_j
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
V_BE = 0 V
T_mb ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL
R_{th j-mb}
R_{th j-a}
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
in free air
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
850
450
850
8
12
4
6
125
150
150
UNIT
V
V
V
A
A
A
A
W
˚C
˚C
TYP.
-
60
MAX.
1
-
UNIT
K/W
K/W
August 1998
1
Rev 1.000