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| BU2532AW Datasheet, PDF (2/6 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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Philips Semiconductors
Silicon Diffused Power Transistor
Initial specification
BU2532AW
STATIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
ICES
Collector cut-off current 2
ICES
IEBO
BVEBO
VCEsat
VBEsat
hFE
hFE
Emitter cut-off current
Base-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ËC
VEB = 7.5 V; IC = 0 A
IB = 1 mA
IC = 7.0 A; IB = 1.17 A
IC = 7.0 A; IB = 1.17 A
IC = 1 A; VCE = 5 V
IC = 7 A; VCE = 5 V
MIN.
-
-
-
7.5
-
0.80
9
6
TYP. MAX. UNIT
-
1.0 mA
-
2.0 mA
-
1.0 mA
14
-
V
-
5.0
V
0.88 0.97 V
17 27
9 12.5
DYNAMIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
Switching times (82 kHz line
deflection dynamic test circuit).
ts
Turn-off storage time
tf
Turn-off fall time
CONDITIONS
ICsat = 7.0 A; LC = 100 µH; Cfb = 3 nF;
VCC = 138 V; IB(end) = 1.0 A
TYP. MAX. UNIT
1.4 1.8 µs
0.06 0.1 µs
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.000
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