BTA212BD Datasheet, PDF (2/6 Pages) NXP Semiconductors – Three quadrant triacs guaranteed commutation

Philips Semiconductors
Three quadrant triacs
guaranteed commutation
Product specification
BTA212B series D, E and F
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
R_{th j-mb}
R_{th j-a}
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
in free air
junction to ambient
MIN.
-
-
-
TYP.
-
-
55
MAX.
1.5
2.0
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
I_GT
Gate trigger current²
I_L
Latching current
CONDITIONS
MIN. TYP.
MAX.
UNIT
BTA212B-
...D ...D ...E ...F
V_D = 12 V; I_T = 0.1 A
T2+ G+
T2+ G-
T2- G-
V_D = 12 V; I_GT = 0.1 A
T2+ G+
T2+ G-
T2- G-
-
1.0 5
10 25 mA
-
2.2 5
10 25 mA
-
3.3 5
10 25 mA
-
6
15 25 30 mA
-
6
25 30 40 mA
-
9
25 30 40 mA
I_H
Holding current
V_D = 12 V; I_GT = 0.1 A
-
3.8 15 25 30 mA
...D, E, F
V_T
On-state voltage
I_T = 17 A
-
1.3
1.6
V
V_GT
Gate trigger voltage
V_D = 12 V; I_T = 0.1 A
-
0.7
1.5
V
V_D = 400 V; I_T = 0.1 A;
0.25 0.4
-
V
T_j = 125 ˚C
I_D
Off-state leakage current V_D = V_DRM(max);
-
0.1
0.5
mA
T_j = 125 ˚C
DYNAMIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
BTA212B- ...D
...E ...F ...D
dV_D/dt
Critical rate of rise of
off-state voltage
V_DM = 67% V_DRM(max);
20 60 70 30
T_j = 110 ˚C; exponential
waveform; gate open
circuit
dI_com/dt Critical rate of change of V_DM = 400 V; T_j = 110 ˚C; 1.8 3.5
5
3
commutating current
I_T(RMS) = 12 A;
dV_com/dt = 20V/µs; gate
open circuit
dI_com/dt
Critical rate of change of V_DM = 400 V; T_j = 110 ˚C; 5
commutating current
I_T(RMS) = 12 A;
dV_com/dt = 0.1V/µs; gate
open circuit
16 19 100
- V/µs
- A/ms
- A/ms
...D, E, F
t_gt
Gate controlled turn-on I_TM = 12 A; V_D = V_DRM(max); -
-
-
2
-
µs
time
I_G = 0.1 A; dI_G/dt = 5 A/µs
2 Device does not trigger in the T2-, G+ quadrant.
February 2000
2
Rev 1.000