BTA212BD Datasheet, PDF (1/6 Pages) NXP Semiconductors – Three quadrant triacs guaranteed commutation

Philips Semiconductors
Three quadrant triacs
guaranteed commutation
Product specification
BTA212B series D, E and F
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated guaranteed commutation
triacs in a plastic envelope suitable for
surface mounting intended for use in
motor control circuits or with other highly
inductive loads. These devices balance
the requirements of commutation
performance and gate sensitivity. The
"sensitive gate" E series and "logic level"
D series are intended for interfacing with
low power drivers, including micro
controllers.
SYMBOL PARAMETER
V_DRM
I_T(RMS)
I_TSM
BTA212B-
BTA212B-
BTA212B-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX. MAX. UNIT
600D -
600E 800E
600F 800F
600 800 V
12 12 A
95 95 A
PINNING - SOT404
PIN
DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
mb main terminal 2
PIN CONFIGURATION
mb
2
13
SYMBOL
T2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_DRM
Repetitive peak off-state
voltages
-600
-
600¹
I_T(RMS)
I_TSM
I²t
dI_T/dt
I_GM
V_GM
P_GM
P_G(AV)
T_stg
T_j
RMS on-state current
Non-repetitive peak
on-state current
I²t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
full sine wave;
-
T_mb ≤ 99 ˚C
full sine wave;
T_j = 25 ˚C prior to
surge
t = 20 ms
-
t = 16.7 ms
-
t = 10 ms
-
I_TM = 20 A; I_G = 0.2 A;
dI_G/dt = 0.2 A/µs
-
-
-
over any 20 ms
-
period
-40
-
MAX.
12
95
105
45
100
2
5
5
0.5
150
125
-800
800
T1
G
UNIT
V
A
A
A
A²s
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
February 2000
1
Rev 1.000