BTA204SB Datasheet, PDF (2/6 Pages) NXP Semiconductors – Three quadrant triacs high commutation

Philips Semiconductors
Three quadrant triacs
high commutation
Product specification
BTA204S series B and C
BTA204M series B and C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
R_{th j-mb}
R_{th j-a}
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
pcb (FR4) mounted; footprint as in Fig.2
junction to ambient
MIN.
-
-
-
TYP.
-
-
75
MAX.
3.0
3.7
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
I_GT
Gate trigger current²
I_L
Latching current
I_H
Holding current
V_T
On-state voltage
V_GT
Gate trigger voltage
I_D
Off-state leakage current
CONDITIONS
BTA204 (or BTA204M)-
V_D = 12 V; I_T = 0.1 A
T2+ G+
T2+ G-
T2- G-
V_D = 12 V; I_GT = 0.1 A
T2+ G+
T2+ G-
T2- G-
V_D = 12 V; I_GT = 0.1 A
I_T = 5 A
V_D = 12 V; I_T = 0.1 A
V_D = 400 V; I_T = 0.1 A;
T_j = 125 ˚C
V_D = V_DRM(max); T_j = 125 ˚C
MIN. TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.4
-
0.7
0.25 0.4
-
0.1
MAX.
...B ...C
50
35
50
35
50
35
30
20
45
30
30
20
30
20
1.7
1.5
-
0.5
UNIT
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
DYNAMIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
BTA204S (or BTA204M)-
dV_D/dt
dI_com/dt
t_gt
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Gate controlled turn-on
time
V_DM = 67% V_DRM(max); T_j = 125 ˚C;
exponential waveform; gate open circuit
V_DM = 400 V; T_j = 125 ˚C; I_T(RMS) = 4 A;
dV_com/dt = 20V/µs; gate open circuit
I_TM = 12 A; V_D = V_DRM(max); I_G = 0.1 A;
dI_G/dt = 5 A/µs
MIN.
...B ...C
1000 1000
6
3
-
-
TYP. UNIT
- V/µs
- A/ms
2
µs
2 Device does not trigger in the T2-, G+ quadrant.
December 1998
2
Rev 1.000