BTA204SB Datasheet, PDF (1/6 Pages) NXP Semiconductors – Three quadrant triacs high commutation

Philips Semiconductors
Three quadrant triacs
high commutation
Product specification
BTA204S series B and C
BTA204M series B and C
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated high commutation triacs in
a plastic envelope suitable for surface
mounting intended for use in circuits
where high static and dynamic dV/dt
and high dI/dt can occur. These
devices will commutate the full rated
rms current at the maximum rated
junction temperature without the aid of
a snubber.
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
V_DRM
I_T(RMS)
I_TSM
BTA204S (or BTA204M)- 500B 600B 800B
BTA204S (or BTA204M)- 500C 600C 800C
Repetitive peak
500 600 800 V
off-state voltages
RMS on-state current
4
4
4
A
Non-repetitive peak on-state 25 25 25 A
current
PINNING - SOT428
PIN Standard Alternative
NUMBER
S
M
1
MT1
gate
2
MT2
MT2
3
gate
MT1
tab
MT2
MT2
PIN CONFIGURATION
tab
2
1
3
SYMBOL
T2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_DRM
Repetitive peak off-state
voltages
-500
-
500¹
I_T(RMS)
I_TSM
I²t
dI_T/dt
I_GM
V_GM
P_GM
P_G(AV)
T_stg
T_j
RMS on-state current
full sine wave;
-
Non-repetitive peak
T_mb ≤ 107 ˚C
full sine wave;
on-state current
T_j = 25 ˚C prior to
surge
t = 20 ms
-
t = 16.7 ms
-
I²t for fusing
t = 10 ms
-
Repetitive rate of rise of
on-state current after
triggering
I_TM = 6 A; I_G = 0.2 A;
dI_G/dt = 0.2 A/µs
Peak gate current
-
Peak gate voltage
-
Peak gate power
-
Average gate power
over any 20 ms
-
period
Storage temperature
-40
Operating junction
-
temperature
MAX.
-600
600¹
4
25
27
3.1
100
2
5
5
0.5
150
125
T1
G
-800
800
UNIT
V
A
A
A
A²s
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
December 1998
1
Rev 1.000