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BFU760F_15 Datasheet, PDF (2/12 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor
NXP Semiconductors
BFU760F
NPN wideband silicon germanium RF transistor
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VCBO
VCEO
VEBO
IC
Ptot
hFE
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
DC current gain
CCBS
fT
collector-base
capacitance
transition frequency
Gp(max) maximum power gain
NF
noise figure
IP3
third-order intercept
point
Conditions
open emitter
open base
open collector
Tsp ≤ 90 °C
IC = 10 mA; VCE = 2 V;
Tj = 25 °C
VCB = 2 V; f = 1 MHz
IC = 50 mA; VCE = 1 V;
f = 2 GHz; Tamb = 25 °C
IC = 50 mA; VCE = 1 V;
f = 2.4 GHz; Tamb = 25 °C
IC = 12 mA; VCE = 2 V;
f = 2.4 GHz; ΓS = Γopt
IC = 30 mA; VCE = 2.5 V;
ZS = ZL = 50 Ω;
f = 2.4 GHz; Tamb = 25 °C
Min Typ
--
--
--
- 25
[1] -
-
155 330
- 175
- 45
[2] -
22
- 0.50
- 32
Max
10
2.8
1.0
70
220
505
-
-
-
-
-
Unit
V
V
V
mA
mW
fF
GHz
dB
dB
dBm
[1] Tsp is the temperature at the solder point of the emitter lead.
[2] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = Maximum Stable Gain (MSG).
2. Pinning information
Table 2.
Pin
1
2
3
4
Discrete pinning
Description
emitter
base
emitter
collector
Simplified outline Graphic symbol
3
4
4
2
1
2
1, 3
mbb159
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
BFU760F
-
plastic surface-mounted flat pack package; reverse
pinning; 4 leads
Version
SOT343F
BFU760F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 29 April 2011
© NXP B.V. 2011. All rights reserved.
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