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BFU760F_15 Datasheet, PDF (2/12 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor | |||
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NXP Semiconductors
BFU760F
NPN wideband silicon germanium RF transistor
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VCBO
VCEO
VEBO
IC
Ptot
hFE
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
DC current gain
CCBS
fT
collector-base
capacitance
transition frequency
Gp(max) maximum power gain
NF
noise figure
IP3
third-order intercept
point
Conditions
open emitter
open base
open collector
Tsp ⤠90 °C
IC = 10 mA; VCE = 2 V;
Tj = 25 °C
VCB = 2 V; f = 1 MHz
IC = 50 mA; VCE = 1 V;
f = 2 GHz; Tamb = 25 °C
IC = 50 mA; VCE = 1 V;
f = 2.4 GHz; Tamb = 25 °C
IC = 12 mA; VCE = 2 V;
f = 2.4 GHz; ÎS = Îopt
IC = 30 mA; VCE = 2.5 V;
ZS = ZL = 50 Ω;
f = 2.4 GHz; Tamb = 25 °C
Min Typ
--
--
--
- 25
[1] -
-
155 330
- 175
- 45
[2] -
22
- 0.50
- 32
Max
10
2.8
1.0
70
220
505
-
-
-
-
-
Unit
V
V
V
mA
mW
fF
GHz
dB
dB
dBm
[1] Tsp is the temperature at the solder point of the emitter lead.
[2] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = Maximum Stable Gain (MSG).
2. Pinning information
Table 2.
Pin
1
2
3
4
Discrete pinning
Description
emitter
base
emitter
collector
Simplified outline Graphic symbol
3
4
4
2
1
2
1, 3
mbb159
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
BFU760F
-
plastic surface-mounted flat pack package; reverse
pinning; 4 leads
Version
SOT343F
BFU760F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 29 April 2011
© NXP B.V. 2011. All rights reserved.
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