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BFU760F_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor | |||
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BFU760F
NPN wideband silicon germanium RF transistor
Rev. 1 â 29 April 2011
Product data sheet
1. Product profile
CAUTION
1.1 General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a
plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
1.2 Features and benefits
 Low noise high linearity RF transistor
 High maximum output third-order intercept point 32 dBm at 1.8 GHz
 110 GHz fT silicon germanium technology
1.3 Applications
 Ka band oscillators DROâs
 High linearity applications
 Medium output power applications
 Wi-Fi / WLAN / WiMAX
 GPS
 ZigBee
 SDARS first stage LNA
 LTE, cellular, UMTS
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