2PD2150_15_15 Datasheet, PDF (2/13 Pages) NXP Semiconductors – 20 V, 3 A NPN low VCEsat (BISS) transistor

NXP Semiconductors
2PD2150
20 V, 3 A NPN low V_CEsat (BISS) transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
emitter
collector
base
Simplified outline Symbol
321
2
3
1
sym042
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
2PD2150
SC-62
plastic surface-mounted package; collector pad for
good heat transfer; 3 leads
Version
SOT89
4. Marking
Table 4. Marking codes
Type number
2PD2150
Marking code
M2
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
V_CBO
collector-base voltage open emitter
-
V_CEO
collector-emitter voltage open base
-
V_EBO
emitter-base voltage
open collector
-
I_C
collector current
-
I_CM
peak collector current
single pulse;
-
t_p ≤ 1 ms
P_tot
total power dissipation T_amb ≤ 25 °C
[1] _-
[2] _-
T_j
junction temperature
-
T_amb
ambient temperature
−65
T_stg
storage temperature
−65
Max
40
20
6
3
5
0.5
2
150
+150
+150
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.
Unit
V
V
V
A
A
W
W
°C
°C
°C
2PD2150_2
Product data sheet
Rev. 02 — 2 January 2007
© NXP B.V. 2007. All rights reserved.
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