2PD2150_15_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – 20 V, 3 A NPN low VCEsat (BISS) transistor

2PD2150
20 V, 3 A NPN low V_CEsat (BISS) transistor
Rev. 02 — 2 January 2007
Product data sheet
1. Product profile
1.1 General description
NPN low V_CEsat Breakthrough In Small Signal (BISS) transistor in a medium power
SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package.
PNP complement: 2PB1424.
1.2 Features
I Low collector-emitter saturation voltage V_CEsat
I High collector current capability I_C and I_CM
I High collector current gain (h_FE) at high I_C
I High efficiency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I DC-to-DC conversion
I MOSFET gate driving
I Motor control
I Charging circuits
I Power switches (e.g. motors, fans)
I Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
V_CEO
I_C
I_CM
V_CEsat
collector-emitter voltage open base
-
collector current
-
peak collector current
collector-emitter
saturation voltage
single pulse;
-
t_p ≤ 1 ms
I_C = 2 A; I_B = 0.1 A ^[1] -
-
20
V
-
3
A
-
5
A
0.2 0.5 V
[1] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.