2N5064 Datasheet, PDF (2/4 Pages) NXP Semiconductors – Thyristor sensitive gate

Philips Semiconductors
Thyristor
sensitive gate
Product specification
2N5064
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-c}
Thermal resistance
junction to case
R_{th j-a}
Thermal resistance
junction to ambient
CONDITIONS
see note:¹
MIN. TYP. MAX. UNIT
-
-
75 K/W
- 200 - K/W
STATIC CHARACTERISTICS
T_c = 25 ˚C, R_GK = 1 kΩ unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
I_GT
I_L
I_H
V_T
V_GT
I_D, I_R
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
T_c = 25 ˚C
T_c = -65 ˚C
V_D = V_DRM(max); R_L = 100 Ω; gate open
circuit
V_D = 12 V; R_GK = 1 kΩ
V_D = 12 V; R_GK = 1 kΩ
I_T = 1.2 A peak; t_p = 300 µs; δ ≤ 0.01
T_j = 25 ˚C
T_j = -65 ˚C
T_j = 125 ˚C
V_D = V_DRM(max); R_L = 100 Ω; gate open
circuit
V_D = V_DRM(max); V_R = V_RRM(max)
T_j = 25 ˚C
T_j = 125 ˚C
MIN.
-
-
TYP. MAX. UNIT
-
200 µA
-
350 µA
-
-
6 mA
-
-
5 mA
-
-
1.7 V
-
-
0.8 V
-
-
1.2 V
0.1
-
-
V
-
-
10 µA
-
-
50 µA
DYNAMIC CHARACTERISTICS
T_c = 25 ˚C, R_GK = 1 kΩ unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
dV_D/dt
t_gt
t_q
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
V_DM = 67% V_DRM(max); T_j = 125 ˚C;
exponential waveform; R_GK = 1 kΩ
I_TM = 2 A; V_D = V_DRM(max); I_G = 10 mA;
dI_G/dt = 0.1 A/µs
V_DM = 67% V_DRM(max); T_j = 125 ˚C;
I_TM = 1.6 A; V_R = 35 V; dI_TM/dt = 30 A/µs;
dV_D/dt = 2 V/µs; R_GK = 1 kΩ
MIN.
-
-
-
TYP. MAX. UNIT
25
- V/µs
2
-
µs
100 -
µs
1 This measurement is made with the case mounted "flat side down" on a heatsink and held in position by means of
a metal clamp over the curved surface.
October 1997
2
Rev 1.200