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BCP69_15 Datasheet, PDF (15/24 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors
NXP Semiconductors
BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
400
(1)
hFE
300
(2)
200
(3)
100
006aac707
0
-10-4
-10-3
-10-2
-10-1
-1
-10
IC (A)
VCE = 1 V
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 55 C
Fig 19. hFE selection -25: DC current gain as a
function of collector current; typical values
-1.2
VBE
(V)
(1)
-0.8
(2)
(3)
-0.4
006aac708
−2.4
IC
(A)
−2.0
−1.6
−1.2
−0.8
−0.4
006aab404
IB (mA) = −12.0
−9.6
−7.2
−4.8
−10.8
−8.4
−6.0
−3.6
−2.4
−1.2
0
0
−1
−2
−3
−4
−5
VCE (V)
Tamb = 25 C
Fig 20. hFE selection -25: collector current as a
function of collector-emitter voltage; typical
values
–1
VCEsat
(V)
–10–1
–10–2
006aac709
(1)
(2)
(3)
0.0
-10-1
-1
-10
-102
-103
-104
IC (mA)
VCE = 1 V
(1) Tamb = 55 C
(2) Tamb = 25 C
(3) Tamb = 100 C
Fig 21. hFE selection -25: base-emitter voltage as a
function of collector current; typical values
–10–3
–10–1
–1
–10
–102
–103
–104
IC (mA)
IC/IB = 10
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 55 C
Fig 22. hFE selection -25: collector-emitter saturation
voltage as a function of collector current;
typical values
BCP69_BC869_BC69PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 12 October 2011
© NXP B.V. 2011. All rights reserved.
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